发明申请
- 专利标题： ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT USING A DOUBLE-TRIGGERED SILICON CONTROLLING RECTIFIER
- 专利标题（中）： 使用双触发硅控制整流器的静电放电保护电路
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申请号： US11306212申请日： 2005-12-20
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公开(公告)号： US20080054297A1公开(公告)日： 2008-03-06
- 发明人: Ming-Dou Ker , Kuo-Chun Hsu
- 申请人： Ming-Dou Ker , Kuo-Chun Hsu
- 优先权： TW92135908 20031218
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
An ESD protection circuit using a double-triggered silicon controller rectifier (SCR). The double-triggered silicon controller rectifier (SCR) includes N+ diffusion areas, P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal.
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