发明申请
- 专利标题： Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device
- 专利标题（中）： 铁电体膜，其制造方法，铁电存储器和压电装置
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申请号： US11976293申请日： 2007-10-23
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公开(公告)号： US20080060381A1公开(公告)日： 2008-03-13
- 发明人: Takeshi Kijima , Hiromu Miyazawa , Yasuaki Hamada , Eiji Natori
- 申请人： Takeshi Kijima , Hiromu Miyazawa , Yasuaki Hamada , Eiji Natori
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2003-91523 20030328; JP2003-209116 20030827; JP2004-5297 20040113
- 主分类号： C03B8/00
- IPC分类号： C03B8/00
摘要：
A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.