发明申请
- 专利标题: COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题(中): 化合物半导体器件及其制造方法
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申请号: US11850377申请日: 2007-09-05
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公开(公告)号: US20080061303A1公开(公告)日: 2008-03-13
- 发明人: Takayuki MATSUYAMA , Tadaaki Hosokawa , Seiji Iida , Akira Tanaka
- 申请人: Takayuki MATSUYAMA , Tadaaki Hosokawa , Seiji Iida , Akira Tanaka
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-241937 20060906
- 主分类号: H01L29/20
- IPC分类号: H01L29/20 ; H01L21/304
摘要:
A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.
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