发明申请
- 专利标题: Semiconductor memory apparatus
- 专利标题(中): 半导体存储装置
-
申请号: US11819633申请日: 2007-06-28
-
公开(公告)号: US20080062777A1公开(公告)日: 2008-03-13
- 发明人: Khil-Ohk Kang
- 申请人: Khil-Ohk Kang
- 申请人地址: KR Gyeonggi-do
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 优先权: KR10-2006-0088744 20060913
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
A semiconductor memory apparatus includes: a driving controller that decodes bank activating signals to generate a plurality of driving control signals, activates some of the driving control signals, and outputs the activated driving signals; and a plurality of internal voltage generators each of which outputs an internal voltage in response to a reference voltage and the corresponding driving control signal and is disposed between two different banks among a plurality of banks.
公开/授权文献
- US07623393B2 Semiconductor memory apparatus 公开/授权日:2009-11-24
信息查询