发明申请
US20080062777A1 Semiconductor memory apparatus 有权
半导体存储装置

  • 专利标题: Semiconductor memory apparatus
  • 专利标题(中): 半导体存储装置
  • 申请号: US11819633
    申请日: 2007-06-28
  • 公开(公告)号: US20080062777A1
    公开(公告)日: 2008-03-13
  • 发明人: Khil-Ohk Kang
  • 申请人: Khil-Ohk Kang
  • 申请人地址: KR Gyeonggi-do
  • 专利权人: Hynix Semiconductor Inc.
  • 当前专利权人: Hynix Semiconductor Inc.
  • 当前专利权人地址: KR Gyeonggi-do
  • 优先权: KR10-2006-0088744 20060913
  • 主分类号: G11C5/14
  • IPC分类号: G11C5/14
Semiconductor memory apparatus
摘要:
A semiconductor memory apparatus includes: a driving controller that decodes bank activating signals to generate a plurality of driving control signals, activates some of the driving control signals, and outputs the activated driving signals; and a plurality of internal voltage generators each of which outputs an internal voltage in response to a reference voltage and the corresponding driving control signal and is disposed between two different banks among a plurality of banks.
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