发明申请
- 专利标题: Silicon-on Insulator Substrate and Method for manufacturing the Same
- 专利标题(中): 硅基绝缘子基板及其制造方法
-
申请号: US11597027申请日: 2005-05-25
-
公开(公告)号: US20080063840A1公开(公告)日: 2008-03-13
- 发明人: Etsurou Morita , Ritarou Sano , Akihiko Endo
- 申请人: Etsurou Morita , Ritarou Sano , Akihiko Endo
- 优先权: JP2004-159398 20040528
- 国际申请: PCT/JP05/09565 WO 20050525
- 主分类号: B32B3/00
- IPC分类号: B32B3/00 ; H01L21/66
摘要:
This SOI substrate includes a base substrate which includes a single-crystal semiconductor and an active layer which includes a single-crystal semiconductor and is bonded to the base substrate with an oxide film therebetween. The oxide film is formed only in the active layer. The active layer is formed with a thickness of 10 to 200 nm and a thickness variation throughout the active layer of 1.5 nm or less by etching a surface of the active layer while selectively using only the reactive radicals generated by a plasma etching process.