Semiconductor Device Power Interconnect Striping

Invention Application

US20080064207A1 Semiconductor Device Power Interconnect Striping 失效

Title translation: 半导体器件电源互连条带

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Patent Title: Semiconductor Device Power Interconnect Striping
Patent Title (中): 半导体器件电源互连条带
Application No.: US11942658

Application Date: 2007-11-19
Publication No.: US20080064207A1

Publication Date: 2008-03-13
Inventor: Edward Osburn
Applicant: Edward Osburn
Main IPC: H01L21/44
IPC: H01L21/44

Semiconductor Device Power Interconnect Striping

Abstract:

A method and an apparatus for improving the delivery and filtering of power to a semiconductor device is disclosed by organizing out interconnects (pins, balls, pads or other interconnects) used to carry power in a striped configuration that shortens the conductive path required between a power source and a semiconductor device and that reduces the resistance of that conductive path.

Abstract(Chinese):

公开了一种用于改进对半导体器件的功率的传递和滤波的方法和装置，其通过组织用于以条形配置携带功率的互连（引脚，球，焊盘或其他互连），其缩短了功率之间所需的导电路径源极和半导体器件，并且降低该导电路径的电阻。

Public/Granted literature

US07732260B2 Semiconductor device power interconnect striping Public/Granted day:2010-06-08

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的