Invention Application
- Patent Title: Device comprising an ohmic via contact, and method of fabricating thereof
- Patent Title (中): 包含欧姆通孔接点的装置及其制造方法
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Application No.: US11520378Application Date: 2006-09-13
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Publication No.: US20080064224A1Publication Date: 2008-03-13
- Inventor: David A. Rothenbury , James D. Huffman
- Applicant: David A. Rothenbury , James D. Huffman
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469

Abstract:
Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.
Public/Granted literature
- US07601624B2 Device comprising an ohmic via contact, and method of fabricating thereof Public/Granted day:2009-10-13
Information query
IPC分类: