Invention Application
US20080064224A1 Device comprising an ohmic via contact, and method of fabricating thereof 有权
包含欧姆通孔接点的装置及其制造方法

Device comprising an ohmic via contact, and method of fabricating thereof
Abstract:
Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.
Information query
Patent Agency Ranking
0/0