发明申请
- 专利标题: Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample
- 专利标题(中): 测量薄膜样品的方法和装置以及制造薄膜样品的方法和装置
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申请号: US11824994申请日: 2007-07-02
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公开(公告)号: US20080067384A1公开(公告)日: 2008-03-20
- 发明人: Yutaka Ikku , Tatsuya Asahata , Hidekazu Suzuki
- 申请人: Yutaka Ikku , Tatsuya Asahata , Hidekazu Suzuki
- 申请人地址: JP Chiba-shi
- 专利权人: SII NANO TECHNOLOGY INC.
- 当前专利权人: SII NANO TECHNOLOGY INC.
- 当前专利权人地址: JP Chiba-shi
- 优先权: JPJP2005-002710 20050107
- 主分类号: G21K7/00
- IPC分类号: G21K7/00
摘要:
In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.