发明申请
US20080067588A1 High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
有权
高压双极CMOS-DMOS集成电路器件和模块化方法相同
- 专利标题: High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
- 专利标题(中): 高压双极CMOS-DMOS集成电路器件和模块化方法相同
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申请号: US11982792申请日: 2007-11-05
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公开(公告)号: US20080067588A1公开(公告)日: 2008-03-20
- 发明人: Richard Williams , Donald Disney , Jun-Wei Chen , Wai Chan , HyungSik Ryu
- 申请人: Richard Williams , Donald Disney , Jun-Wei Chen , Wai Chan , HyungSik Ryu
- 申请人地址: US CA Santa Clara
- 专利权人: Advanced Analogic Technologies, Inc.
- 当前专利权人: Advanced Analogic Technologies, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.
公开/授权文献
- US07683426B2 High-voltage lateral DMOS device with diode clamp 公开/授权日:2010-03-23