发明申请
- 专利标题: Method of manufacturing a non-volatile memory device
- 专利标题(中): 制造非易失性存储器件的方法
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申请号: US11902209申请日: 2007-09-20
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公开(公告)号: US20080070368A1公开(公告)日: 2008-03-20
- 发明人: Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yl
- 申请人: Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yl
- 专利权人: SAMSUNG ELECTRONICS CO., LTD
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD
- 优先权: KR10-2006-91063 20060920; KR10-2007-73856 20070724
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/3205
摘要:
In a method of manufacturing a non-volatile memory device, a tunnel insulating layer may be formed on a channel region of a substrate. A charge trapping layer including silicon nitride may be formed on the tunnel insulating layer to trap electrons from the channel region. A heat treatment may be performed using a first gas including nitrogen and a second gas including oxygen to remove defect sites in the charge trapping layer and to densify the charge trapping layer. A blocking layer may be formed on the heat-treated charge trapping layer, and a conductive layer may then formed on the blocking layer. The blocking layer, the conductive layer, the heat-treated charge trapping layer and the tunnel insulating layer may be patterned to form a gate structure on the channel region. Accordingly, data retention performance and/or reliability of a non-volatile memory device including the gate structure may be improved.
公开/授权文献
- US08114735B2 Method of manufacturing a non-volatile memory device 公开/授权日:2012-02-14