发明申请
- 专利标题： Modified Gold-Tin System With Increased Melting Temperature for Wafer Bonding
- 专利标题（中）： 改进的金锡系统，晶片接合熔化温度提高
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申请号： US11534317申请日： 2006-09-22
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公开(公告)号： US20080073665A1公开(公告)日： 2008-03-27
- 发明人: David B. Slater , John A. Edmond , Hua-Shuang Kong
- 申请人： David B. Slater , John A. Edmond , Hua-Shuang Kong
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/58
摘要：
A semiconductor structure and a bonding method are disclosed that includes a device wafer, a substrate wafer, and a metal bonding system between the device wafer and the substrate wafer. The metal bonding system includes gold, tin, and nickel, and includes at least one discrete layer of gold and tin that is at least about 88 percent gold by weight.
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