发明申请
- 专利标题： Non-volatile semiconductor memory device and method for fabricating the same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US11898949申请日： 2007-09-18
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公开(公告)号： US20080073682A1公开(公告)日： 2008-03-27
- 发明人: Yoshinori Kumura , Tohru Ozaki , Iwao Kunishima
- 申请人： Yoshinori Kumura , Tohru Ozaki , Iwao Kunishima
- 优先权： JP2006-259509 20060925
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/00
摘要：
According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric film and a second electrode in order, a first protective film with hydrogen barrier performance, the first protective film being formed under the first electrode and on a side-wall of the ferroelectric capacitor, the first protective film being widened from the second electrode towards the first electrode, a second protective film with hydrogen barrier performance, the second protective film being formed over the second electrode and on the first protective film formed on the side-wall of the ferroelectric capacitor, the second protective film being widened from the first electrode towards the second electrode, a cell transistor, a source of the cell transistor being connected to the first electrode, a drain of the cell transistor being connected to a bit line and a gate being connected to a word line.
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