发明申请
- 专利标题: Frequency Monitoring to Detect Plasma Process Abnormality
- 专利标题(中): 频率监测检测等离子体过程异常
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申请号: US11682290申请日: 2007-03-05
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公开(公告)号: US20080074255A1公开(公告)日: 2008-03-27
- 发明人: Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
- 申请人: Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 主分类号: G08B21/00
- IPC分类号: G08B21/00
摘要:
Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
公开/授权文献
- US07902991B2 Frequency monitoring to detect plasma process abnormality 公开/授权日:2011-03-08
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