Invention Application
US20080074808A1 Magnetoresistive element, manufacturing method thereof, and magnetic storage device utilizing the same magnetoresistive element 审中-公开
磁阻元件及其制造方法以及利用同一磁阻元件的磁存储装置

  • Patent Title: Magnetoresistive element, manufacturing method thereof, and magnetic storage device utilizing the same magnetoresistive element
  • Patent Title (中): 磁阻元件及其制造方法以及利用同一磁阻元件的磁存储装置
  • Application No.: US11710736
    Application Date: 2007-02-26
  • Publication No.: US20080074808A1
    Publication Date: 2008-03-27
  • Inventor: Hideyuki AkimotoNaoki Mukoyama
  • Applicant: Hideyuki AkimotoNaoki Mukoyama
  • Assignee: FUJITSU LIMITED
  • Current Assignee: FUJITSU LIMITED
  • Priority: JP2006-263418 20060927
  • Main IPC: G11B5/33
  • IPC: G11B5/33
Magnetoresistive element, manufacturing method thereof, and magnetic storage device utilizing the same magnetoresistive element
Abstract:
A magnetoresistive element 11 is formed with inclusion of a free layer 12, a pinned layer 13, an antiferromagnetic layer 14 for pinning the pinned layer 13, an intermediate layer 15 provided between the free layer 12 and the pinned layer 13, and a ferromagnetic layer 16 for applying a longitudinal bias magnetic field to the free layer. After initial magnetization, characteristic evaluation is conducted for the magnetoresistive element 11. Intensity of longitudinal bias field is adjusted by magnetizing again in a direction different from that of the initial magnetization, if required, on the basis of the evaluation result.
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