Invention Application
US20080079075A1 COMPOSITION FOR DIELECTRIC THIN FILM, METAL OXIDE DIELECTRIC THIN FILM USING THE SAME AND PREPARATION METHOD THEREOF
有权
用于介电薄膜的组合物，使用其的金属氧化物介电薄膜及其制备方法
- Patent Title: COMPOSITION FOR DIELECTRIC THIN FILM, METAL OXIDE DIELECTRIC THIN FILM USING THE SAME AND PREPARATION METHOD THEREOF
- Patent Title (中): 用于介电薄膜的组合物，使用其的金属氧化物介电薄膜及其制备方法
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Application No.: US11831380Application Date: 2007-07-31
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Publication No.: US20080079075A1Publication Date: 2008-04-03
- Inventor: Jong Baek SEON , Hyun Dam JEONG , Sang Yoon LEE
- Applicant: Jong Baek SEON , Hyun Dam JEONG , Sang Yoon LEE
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2006-0096650 20060930; KR10-2007-0048233 20070517
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01B3/20
Abstract:
This invention pertains to a composition for a dielectric thin film, which is capable of being subjected to a low-temperature process. Specifically, the invention is directed to a metal oxide dielectric thin film formed using the composition, a preparation method thereof, a transistor device comprising the dielectric thin film, and an electronic device comprising the transistor device. The electronic device to which the dielectric thin film has been applied exhibits excellent electrical properties, thereby satisfying both a low operating voltage and a high charge mobility.
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