发明申请
- 专利标题： Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory
- 专利标题（中）： 磁阻效应元件，磁头，磁记录/再现装置和磁存储器
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申请号： US11892890申请日： 2007-08-28
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公开(公告)号： US20080080098A1公开(公告)日： 2008-04-03
- 发明人: Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
- 申请人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba,TDK Corporation
- 当前专利权人： Kabushiki Kaisha Toshiba,TDK Corporation
- 当前专利权人地址： JP Tokyo JP Tokyo
- 优先权： JPP2006-265836 20060928
- 主分类号： G11B5/33
- IPC分类号： G11B5/33
摘要：
A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
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