发明申请
- 专利标题: Memory devices and memory systems having the same
- 专利标题(中): 具有相同的存储器件和存储器系统
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申请号: US11902424申请日: 2007-09-21
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公开(公告)号: US20080080240A1公开(公告)日: 2008-04-03
- 发明人: Kwang-Jin Lee , Won-Seok Lee , Choong-Keun Kwak
- 申请人: Kwang-Jin Lee , Won-Seok Lee , Choong-Keun Kwak
- 专利权人: SAMSUNG ELECTRONICS CO., LTD
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD
- 优先权: KR10-2006-0095889 20060929
- 主分类号: G11C16/00
- IPC分类号: G11C16/00
摘要:
A non volatile memory device and a memory system having the same are disclosed. The non volatile memory device may include a memory cell array having a plurality of non volatile memory cells, a DRAM interface for exchanging data, a command and an address with an external device, a controller for selecting one of the memory cells in response to the address and performing a control operation for one of outputting data of the selected memory cell to the external device in response to the command and storing data received from the external device, and a DRAM buffer memory. The DRAM buffer memory has dynamic memory cells, and each of the dynamic memory cells has one transistor with a floating body.
公开/授权文献
- US07535760B2 Memory devices and memory systems having the same 公开/授权日:2009-05-19
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