发明申请
US20080081424A1 Method of production of a semiconductor memory device and semiconductor memory device
审中-公开
半导体存储器件和半导体存储器件的制造方法
- 专利标题： Method of production of a semiconductor memory device and semiconductor memory device
- 专利标题（中）： 半导体存储器件和半导体存储器件的制造方法
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申请号： US11541458申请日： 2006-09-29
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公开(公告)号： US20080081424A1公开(公告)日： 2008-04-03
- 发明人: Josef Willer , Karl-Heinz Kuesters
- 申请人： Josef Willer , Karl-Heinz Kuesters
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A layer of electrically conductive material is applied above a carrier surface. Gate electrodes are formed above a first area of the carrier surface from the electrically conductive material. An implantation of a dopant that is provided for source/drain regions is performed in the first area. The implant is annealed, and an auxiliary layer of a dielectric material is applied to planarize the surface. The first area is covered with a mask, and a further implantation of a dopant provided for source/drain regions is performed in a second area of the carrier surface provided for a memory cell array. The implant is annealed, and the memory cells are formed in the second area. The semiconductor memory device may comprise a selectively deposited electrically conductive material on the gate electrodes of the periphery and on buried bitlines of the memory cell array.
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