发明申请
- 专利标题： Method of forming metal wire of semiconductor device
- 专利标题（中）： 形成半导体器件金属线的方法
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申请号： US11603752申请日： 2006-11-22
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公开(公告)号： US20080081453A1公开(公告)日： 2008-04-03
- 发明人: Jung Geun Kim , Cheol Mo Jeong , Eun Soo Kim , Seung Hee Hong
- 申请人： Jung Geun Kim , Cheol Mo Jeong , Eun Soo Kim , Seung Hee Hong
- 申请人地址： KR Kyoungki-do
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Kyoungki-do
- 优先权： KR2006-96177 20060929
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of forming a metal line of a semiconductor device includes the steps of forming an insulating layer and a glue layer on a semiconductor substrate, removing a portion of the glue layer and the insulating layer to form trenches, forming a metal layer over the semiconductor substrate including the trenches and the glue layer, and performing a polishing process until the insulating layer is exposed, thus forming a metal line.
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