发明申请
- 专利标题: MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
- 专利标题(中): 无碳化硅和相关的制造方法
-
申请号: US11854864申请日: 2007-09-13
-
公开(公告)号: US20080083366A1公开(公告)日: 2008-04-10
- 发明人: Cem Basceri , Yuri Khlebnikov , Igor Khlebnikov , Cengiz Balkas , Murat Silan , Hudson Hobgood , Calvin Carter , Vijay Balakrishna , Robert Leonard , Adrian Powell , Valeri Tsvetkov , Jason Jenny
- 申请人: Cem Basceri , Yuri Khlebnikov , Igor Khlebnikov , Cengiz Balkas , Murat Silan , Hudson Hobgood , Calvin Carter , Vijay Balakrishna , Robert Leonard , Adrian Powell , Valeri Tsvetkov , Jason Jenny
- 申请人地址: US NC Durham 27703
- 专利权人: CREE, INC.
- 当前专利权人: CREE, INC.
- 当前专利权人地址: US NC Durham 27703
- 主分类号: C30B23/00
- IPC分类号: C30B23/00 ; C30B25/00
摘要:
Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.