发明申请
- 专利标题: Lithographic apparatus, and device manufacturing method
- 专利标题(中): 光刻设备和器件制造方法
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申请号: US11544930申请日: 2006-10-10
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公开(公告)号: US20080083885A1公开(公告)日: 2008-04-10
- 发明人: Maarten Marinus Johannes Wilhelmus Van Herpen , Vadim Yevgenyevich Banine , Johannes Peterus Henricus De Kuster , Johannes Hubertus Josephina Moors , Lucas Henricus Johannes Stevens , Bastiaan Theodoor Wolschrijn , Yurii Victorovitch Sidelnikov , Marc Hubertus Lorenz Van Der Velden , Wouter Anton Soer , Thomas Stein , Kurt Gielissen
- 申请人: Maarten Marinus Johannes Wilhelmus Van Herpen , Vadim Yevgenyevich Banine , Johannes Peterus Henricus De Kuster , Johannes Hubertus Josephina Moors , Lucas Henricus Johannes Stevens , Bastiaan Theodoor Wolschrijn , Yurii Victorovitch Sidelnikov , Marc Hubertus Lorenz Van Der Velden , Wouter Anton Soer , Thomas Stein , Kurt Gielissen
- 申请人地址: NL Veldhoven DE Oberkochen
- 专利权人: ASML Netherlands B.V.,Carl Zeiss SMT AG
- 当前专利权人: ASML Netherlands B.V.,Carl Zeiss SMT AG
- 当前专利权人地址: NL Veldhoven DE Oberkochen
- 主分类号: G21K5/00
- IPC分类号: G21K5/00 ; G21G4/00
摘要:
A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.
公开/授权文献
- US07629594B2 Lithographic apparatus, and device manufacturing method 公开/授权日:2009-12-08
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