Invention Application
- Patent Title: APPARATUS AND METHOD TO IMPROVE UNIFORMITY AND REDUCE LOCAL EFFECT OF PROCESS CHAMBER
- Patent Title (中): 提高均匀性并降低过程室本地效应的装置和方法
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Application No.: US11539958Application Date: 2006-10-10
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Publication No.: US20080084649A1Publication Date: 2008-04-10
- Inventor: Yu-Cheng CHANG , Ying-Lin CHEN
- Applicant: Yu-Cheng CHANG , Ying-Lin CHEN
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01T23/00
- IPC: H01T23/00
Abstract:
An apparatus includes a processing chamber having a plasma containing region, a dielectric plate secured on top of the processing chamber, a power source separated from the plasma containing region by the dielectric plate, and a chuck supported within the processing chamber. The chuck is operable and configured to move with respect to the power source.
Public/Granted literature
- US08223470B2 Apparatus and method to improve uniformity and reduce local effect of process chamber Public/Granted day:2012-07-17
Information query
