发明申请
- 专利标题： SINGLE CRYSTAL DIAMOND
- 专利标题（中）： 单晶水钻
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申请号： US11743680申请日： 2007-05-03
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公开(公告)号： US20080085233A1公开(公告)日： 2008-04-10
- 发明人: Geoffrey Scarsbrook , Philip Martineau , Daniel Twitchen
- 申请人： Geoffrey Scarsbrook , Philip Martineau , Daniel Twitchen
- 优先权： GB0221949.1 20020920
- 主分类号： C01B31/06
- IPC分类号： C01B31/06
摘要：
A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.
公开/授权文献
- US09518338B2 Single crystal diamond 公开/授权日：2016-12-13
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