发明申请
- 专利标题: Fabrication Method for Quasi-Phase-Matched Waveguides
- 专利标题(中): 准相位匹配波导的制作方法
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申请号: US11861447申请日: 2007-09-26
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公开(公告)号: US20080087632A1公开(公告)日: 2008-04-17
- 发明人: Woo Seok Yang , Han Young Lee , Hyung Man Lee , Woo Kyung Kim , Soon Sup Park
- 申请人: Woo Seok Yang , Han Young Lee , Hyung Man Lee , Woo Kyung Kim , Soon Sup Park
- 申请人地址: KR Gyeonggi-do
- 专利权人: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
- 当前专利权人: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
- 当前专利权人地址: KR Gyeonggi-do
- 优先权: KR10-2006-0099615 20061013
- 主分类号: B29D11/00
- IPC分类号: B29D11/00
摘要:
The present invention relates to a fabrication method for a quasi-phase-matched waveguide. The method includes the steps of forming a metal etch mask on a ferroelectric single crystal substrate, etching the substrate by using the etch mask, removing the etch mask, forming conductive layers on the etched substrate, forming polarization regions by applying an electric field to the conductive layers, and flattening the substrate after removing the conductive layers. Accordingly, the present invention is advantageous in that it can be applied to various fields employing a ferroelectric substrate, such as LiNbO3, LiTaO3, Mg:LiNbO3 or Zn:LiNbO3, it can obtain more accurate and uniform periodic domain inversion devices with a high quality and can fabricate devices that are cheaper and have a better performance.
公开/授权文献
- US07864409B2 Fabrication method for quasi-phase-matched waveguides 公开/授权日:2011-01-04
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