发明申请
- 专利标题： Semiconductor memory device and method of controlling the same
- 专利标题（中）： 半导体存储器件及其控制方法
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申请号： US11905050申请日： 2007-09-27
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公开(公告)号： US20080089121A1公开(公告)日： 2008-04-17
- 发明人: Hideaki Aochi , Yoshiaki Fukuzumi
- 申请人： Hideaki Aochi , Yoshiaki Fukuzumi
- 优先权： JP2006-263308 20060927
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A semiconductor memory device comprising: first and second wirings arranged in a matrix; and a memory cell being provided at an intersecting point of the first and second wirings and including a resistance change element and an ion conductor element connected to each other in a cascade arrangement between the first and second wirings.
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