发明申请
- 专利标题: Semiconductor memory device and method thereof
- 专利标题(中): 半导体存储器件及其方法
-
申请号: US11878087申请日: 2007-07-20
-
公开(公告)号: US20080089153A1公开(公告)日: 2008-04-17
- 发明人: Young-yong Byun , Hi-choon Lee
- 申请人: Young-yong Byun , Hi-choon Lee
- 专利权人: Samsung Electronics Company, Ltd.
- 当前专利权人: Samsung Electronics Company, Ltd.
- 优先权: KR10-2006-0100383 20061016
- 主分类号: G11C29/04
- IPC分类号: G11C29/04
摘要:
A semiconductor memory device and method thereof are provided. The example semiconductor memory device may include a plurality of comparators receiving output data signals from each of a plurality of sub-array blocks, comparing the output data signals from each of the plurality of sub-array blocks and outputting a plurality of comparison result signals and a test circuit receiving the plurality of comparison result signals from the plurality of comparators, respectively, the test circuit configured to selectively output one of a given one of the plurality of comparison result signals on a given data input/output pad and a given signal obtained by performing a logical operation on at least two of the plurality of comparison result signals on the given data input/output pad in response to a select signal.
公开/授权文献
- US07755958B2 Semiconductor memory device and method thereof 公开/授权日:2010-07-13