Invention Application
US20080090423A1 Gas switching during an etch process to modulate the characteristics of the etch
有权
在蚀刻工艺期间的气体切换以调制蚀刻的特性
- Patent Title: Gas switching during an etch process to modulate the characteristics of the etch
- Patent Title (中): 在蚀刻工艺期间的气体切换以调制蚀刻的特性
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Application No.: US11923852Application Date: 2007-10-25
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Publication No.: US20080090423A1Publication Date: 2008-04-17
- Inventor: Ping Jiang , Francis Celii
- Applicant: Ping Jiang , Francis Celii
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
Gas switching is used during an etch process to modulate the characteristics of the etch. The etch process comprises a sequence of at least three steps, wherein the sequence is repeated at least once. For example, the first step may result in a high etch rate of oxide (108) while the second step is a polymer coating steps and the third step results in a low etch rate of oxide and high etch rate of another material (114) and/or sputtering.
Public/Granted literature
- US07572733B2 Gas switching during an etch process to modulate the characteristics of the etch Public/Granted day:2009-08-11
Information query
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