发明申请
- 专利标题: Method of forming an oxinitride layer
- 专利标题(中): 形成氮氧化物层的方法
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申请号: US11973042申请日: 2007-10-05
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公开(公告)号: US20080090424A1公开(公告)日: 2008-04-17
- 发明人: Young-Sub You , Hun-Hyeoung Leam , Seok-Woo Nam , Bong-Hyun Kim , Woong Lee , Sang-Hoon Lee
- 申请人: Young-Sub You , Hun-Hyeoung Leam , Seok-Woo Nam , Bong-Hyun Kim , Woong Lee , Sang-Hoon Lee
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR2003-29446 20030509
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the substrate using a reaction gas while increasing a temperature of the reaction chamber from the first temperature to a second temperature under a second pressure. Additionally, the oxide layer is nitrified in the reaction chamber to form the oxynitride layer on the substrate. When the oxide layer and/or the oxynitride layer are formed on the substrate, minute patterns of a semiconductor device, for example a DRAM device, an SRAM device or an LOGIC device may be easily formed on the oxide layer or the oxynitride layer.
公开/授权文献
- US07521375B2 Method of forming an oxinitride layer 公开/授权日:2009-04-21