A storage node may include a bottom electrode contact layer, a phase change layer connected to the bottom electrode contact layer, and a top electrode layer connected to the phase change layer. The bottom electrode contact layer may protrude toward the phase change layer. A phase change memory device may include a switching device and the storage node. The switching device may be connected to the bottom electrode contact layer. A method of manufacturing the storage node may include forming a via hole in an insulating interlayer, at least partially filling the via hole to form a bottom electrode contact layer, protruding the bottom electrode contact layer from the via hole, and forming a phase change layer that covers the bottom electrode contact layer. A method of manufacturing a phase change memory device may include forming the switching device on a substrate and manufacturing the storage node.