发明申请
US20080093609A1 Silicon Nitride Layer for Light Emitting Device, Light Emitting Device Using the Same, and Method of Forming Silicon Nitride Layer for Light Emitting Device
审中-公开
发光装置用氮化硅层，使用该发光元件的发光装置及形成发光装置用氮化硅层的方法
- 专利标题： Silicon Nitride Layer for Light Emitting Device, Light Emitting Device Using the Same, and Method of Forming Silicon Nitride Layer for Light Emitting Device
- 专利标题（中）： 发光装置用氮化硅层，使用该发光元件的发光装置及形成发光装置用氮化硅层的方法
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申请号： US11577333申请日： 2005-11-04
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公开(公告)号： US20080093609A1公开(公告)日： 2008-04-24
- 发明人: Tae Kim , Nae Park , Kyung Kim , Gun Sung
- 申请人： Tae Kim , Nae Park , Kyung Kim , Gun Sung
- 优先权： KR10-2004-0089475 20041104
- 国际申请： PCT/KR05/03709 WO 20051104
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/36
摘要：
Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.
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