Invention Application
- Patent Title: Thin film transistor array substrate having sandwich structure gate electrode and manufacturing method thereof
- Patent Title (中): 具有夹层结构的栅电极的薄膜晶体管阵列基板及其制造方法
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Application No.: US11906522Application Date: 2007-10-01
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Publication No.: US20080096015A1Publication Date: 2008-04-24
- Inventor: Shuo-Ting Yan
- Applicant: Shuo-Ting Yan
- Assignee: INNOLUX DISPLAY CORP.
- Current Assignee: INNOLUX DISPLAY CORP.
- Priority: TW95136316 20060929
- Main IPC: B32B15/04
- IPC: B32B15/04 ; B32B15/20 ; B32B17/06

Abstract:
An exemplary thin film transistor array substrate (200) includes a substrate (210) and a gate electrode (220) formed on the substrate. The gate electrode includes an adhesive layer (226) formed on the substrate, a conductive layer (224) formed on the adhesive layer and a barrier layer (222) formed on the conductive layer, the adhesive layer and the barrier layer both have sandwich structures. A central core of the adhesive layer, the conductive layer, and a central core of the barrier layer are made of a same material.
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