Invention Application
US20080096015A1 Thin film transistor array substrate having sandwich structure gate electrode and manufacturing method thereof 有权
具有夹层结构的栅电极的薄膜晶体管阵列基板及其制造方法

Thin film transistor array substrate having sandwich structure gate electrode and manufacturing method thereof
Abstract:
An exemplary thin film transistor array substrate (200) includes a substrate (210) and a gate electrode (220) formed on the substrate. The gate electrode includes an adhesive layer (226) formed on the substrate, a conductive layer (224) formed on the adhesive layer and a barrier layer (222) formed on the conductive layer, the adhesive layer and the barrier layer both have sandwich structures. A central core of the adhesive layer, the conductive layer, and a central core of the barrier layer are made of a same material.
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