发明申请
- 专利标题: METHOD OF MANUFACTURING DUAL ORIENTATION WAFERS
- 专利标题(中): 制造双取向波的方法
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申请号: US11955436申请日: 2007-12-13
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公开(公告)号: US20080096370A1公开(公告)日: 2008-04-24
- 发明人: Brent Anderson , John Ellis-Monaghan , Alain Loiseau , Kirk Peterson
- 申请人: Brent Anderson , John Ellis-Monaghan , Alain Loiseau , Kirk Peterson
- 申请人地址: US NY Armonk 10504
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk 10504
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
Disclosed is a method of manufacturing dual orientation wafers. A trench is formed in a multi-layer wafer to a silicon substrate with a first crystalline orientation. The trench is filled with a silicon material (e.g., amorphous silicon or polysilicon trench). Isolation structures are formed to isolate the silicon material in the trench from a semiconductor layer with a second crystalline orientation. Additional isolation structures are formed within the silicon material in the trench and within the semiconductor layer. A patterned amorphization process is performed on the silicon material in the trench and followed by a recrystallization anneal such that the silicon material in the trench recrystallizes with the same crystalline orientation as the silicon substrate. The resulting structure is a semiconductor wafer with isolated semiconductor areas on the same plane having different crystalline orientations as well as isolated sections within each semiconductor area for device formation.
公开/授权文献
- US07799609B2 Method of manufacturing dual orientation wafers 公开/授权日:2010-09-21