发明申请
- 专利标题： METHOD AND APPARATUS FOR PHOTOMASK PLASMA ETCHING
- 专利标题（中）： 用于光电子等离子体蚀刻的方法和装置
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申请号： US11554495申请日： 2006-10-30
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公开(公告)号： US20080099426A1公开(公告)日： 2008-05-01
- 发明人: Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
- 申请人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; B44C1/22
摘要：
A method and apparatus for etching photomasks are provided herein. The apparatus includes a process chamber with a shield above a substrate support. The shield comprises a plate with apertures, and the plate has two zones with at least one characteristic, such as material or potential bias, that is different from each other. The method provides for etching a photomask substrate with a distribution of ions and neutral species that pass through the shield.
公开/授权文献
- US07909961B2 Method and apparatus for photomask plasma etching 公开/授权日：2011-03-22
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