- 专利标题: Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
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申请号: US11590179申请日: 2006-10-31
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公开(公告)号: US20080099731A1公开(公告)日: 2008-05-01
- 发明人: Prabhat Kumar , Rong-Chein Richard Wu , Shuwei Sun
- 申请人: Prabhat Kumar , Rong-Chein Richard Wu , Shuwei Sun
- 专利权人: H.C. Starck Inc.
- 当前专利权人: H.C. Starck Inc.
- 主分类号: H01B1/12
- IPC分类号: H01B1/12
摘要:
The present invention is directed to a composition consisting essentially of: a) from about 60 to about 99 mole % of SnO2, and b) from about 1 to about 40 mole % of one or more materials selected from the group consisting of i) Nb2O5, ii) NbO, iii) NbO2, iv) WO2, v) a material selected consisting of a) a mixture of MoO2 and Mo and b) Mo, vi) W, vii) Ta2O5, and viii) mixtures thereof, wherein the mole % s are based on the total product and wherein the sum of components a) and b) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.
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