发明申请
US20080099761A1 TEST STRUCTURE FOR OPC-RELATED SHORTS BETWEEN LINES IN A SEMICONDUCTOR DEVICE 有权
在半导体器件中的线之间的与OPC相关的短路的测试结构

  • 专利标题: TEST STRUCTURE FOR OPC-RELATED SHORTS BETWEEN LINES IN A SEMICONDUCTOR DEVICE
  • 专利标题(中): 在半导体器件中的线之间的与OPC相关的短路的测试结构
  • 申请号: US11747320
    申请日: 2007-05-11
  • 公开(公告)号: US20080099761A1
    公开(公告)日: 2008-05-01
  • 发明人: Frank FeustelThomas WernerKai Frohberg
  • 申请人: Frank FeustelThomas WernerKai Frohberg
  • 优先权: DE102006051489.0 20061031
  • 主分类号: H01L21/66
  • IPC分类号: H01L21/66 H01L23/58
TEST STRUCTURE FOR OPC-RELATED SHORTS BETWEEN LINES IN A SEMICONDUCTOR DEVICE
摘要:
OPC results may be efficiently evaluated on the basis of a test structure containing a plurality of line features with opposing end portions. Thus, for different line parameters, the effect of OPC may be determined for a given critical tip-to-tip distance by determining the leakage behavior of the test assemblies, each having different design parameter values for line width and lateral distance between adjacent lines.
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