发明申请
US20080099789A1 Self-aligned method of forming a semiconductor memory array of floating gate memory cells with source side erase, and a memory array made thereby
有权
形成具有源极侧擦除的浮动栅极存储单元的半导体存储器阵列的自对准方法，以及由此制成的存储器阵列
- 专利标题： Self-aligned method of forming a semiconductor memory array of floating gate memory cells with source side erase, and a memory array made thereby
- 专利标题（中）： 形成具有源极侧擦除的浮动栅极存储单元的半导体存储器阵列的自对准方法，以及由此制成的存储器阵列
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申请号： US11592104申请日： 2006-11-01
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公开(公告)号： US20080099789A1公开(公告)日： 2008-05-01
- 发明人: Alexander Kotov , Amitay Levi , Hung Q. Nguyen , Pavel Klinger
- 申请人： Alexander Kotov , Amitay Levi , Hung Q. Nguyen , Pavel Klinger
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; G11C16/04 ; H01L21/336 ; H01L21/82 ; H01L27/10
摘要：
A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a substrate of semiconductor material having a first conductivity type, source and drain regions formed in the substrate, a block of conductive material disposed over and electrically connected to the source, and a floating gate having a first portion disposed over and insulated from the source region and a second portion disposed over and insulated from the channel region. The floating gate first portion includes a sloped upper surface and a side surface that meet at an acute edge. An electrically conductive control gate is disposed over and insulated from the channel region for controlling a conductivity thereof.
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