发明申请
US20080099807A1 LOW-VOLTAGE IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR THEREOF
有权
低电压图像传感器及其驱动转换晶体管的方法
- 专利标题: LOW-VOLTAGE IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR THEREOF
- 专利标题(中): 低电压图像传感器及其驱动转换晶体管的方法
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申请号: US11875513申请日: 2007-10-19
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公开(公告)号: US20080099807A1公开(公告)日: 2008-05-01
- 发明人: Mi Kim , Bong Mheen , Young Song , Seong Park
- 申请人: Mi Kim , Bong Mheen , Young Song , Seong Park
- 优先权: KR10-2006-0102423 20061020; KR10-2007-0022980 20070308
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H04N5/335
摘要:
Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.
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