发明申请
- 专利标题: MULTIPLE LAYER AND CYRSTAL PLANE ORIENTATION SEMICONDUCTOR SUBSTRATE
- 专利标题(中): 多层和单层平面定向半导体基板
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申请号: US11969320申请日: 2008-01-04
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公开(公告)号: US20080099844A1公开(公告)日: 2008-05-01
- 发明人: Toshiharu Furukawa , David Horak , Charles Koburger , Leathen Shi
- 申请人: Toshiharu Furukawa , David Horak , Charles Koburger , Leathen Shi
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
摘要:
A semiconductor on insulator substrate and a method of fabricating the substrate. The substrate including: a first crystalline semiconductor layer and a second crystalline semiconductor layer; and an insulating layer bonding a bottom surface of the first crystalline semiconductor layer to a top surface of the second crystalline semiconductor layer, a first crystal direction of the first crystalline semiconductor layer aligned relative to a second crystal direction of the second crystalline semiconductor layer, the first crystal direction different from the second crystal direction.