发明申请
- 专利标题： Method of forming metal line in semiconductor device
- 专利标题（中）： 在半导体器件中形成金属线的方法
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申请号： US11647088申请日： 2006-12-27
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公开(公告)号： US20080102622A1公开(公告)日： 2008-05-01
- 发明人: Jung Geun Kim , Cheol Mo Jeong , Whee Won Cho , Seong Hwan Myung
- 申请人： Jung Geun Kim , Cheol Mo Jeong , Whee Won Cho , Seong Hwan Myung
- 申请人地址： KR Kyoungki-do
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Kyoungki-do
- 优先权： KR2006-106411 20061031
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method of forming a metal line in a semiconductor device, including the steps of forming a metal line in a semiconductor device in which dummy patterns are formed on a dummy region by using non-metal material when a metal line is formed through a damascene process to prevent a formation of an oxide layer on an aluminum layer caused by a slurry and cleaning solution used in the chemical mechanical polishing (CMP) process and carry out an uniform polishing process, whereby it is possible to prevent a digging phenomenon on a metal layer from being generated.
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