发明申请
- 专利标题： CMP of copper/ruthenium/tantalum substrates
- 专利标题（中）： 铜/钌/钽基板的CMP
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申请号： US11591730申请日： 2006-11-02
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公开(公告)号： US20080105652A1公开(公告)日： 2008-05-08
- 发明人: Vlasta Brusic , Renjie Zhou , Christopher C. Thompson , Paul M. Feeney
- 申请人： Vlasta Brusic , Renjie Zhou , Christopher C. Thompson , Paul M. Feeney
- 申请人地址： US IL Aurora
- 专利权人： Cabot Microelectronics Corporation
- 当前专利权人： Cabot Microelectronics Corporation
- 当前专利权人地址： US IL Aurora
- 主分类号： C09K13/00
- IPC分类号： C09K13/00 ; B44C1/00
摘要：
The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic surfactant, calcium ion or magnesium ion, a corrosion inhibitor for copper, and water, wherein the pH of the polishing composition is about 6 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
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