发明申请
- 专利标题： Thin film transistor array substrate having lightly doped amorphous silicon layer and method for fabricating same
- 专利标题（中）： 具有轻掺杂非晶硅层的薄膜晶体管阵列基板及其制造方法
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申请号： US11982869申请日： 2007-11-05
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公开(公告)号： US20080105871A1公开(公告)日： 2008-05-08
- 发明人: Shuo-Ting Yan , Chien-Hsiung Chang , Yu-Hsiung Chang , Kai-Yuan Cheng , Tsau-Hua Hsieh , Chao-Yi Hung , Chao-Chih Lai
- 申请人： Shuo-Ting Yan , Chien-Hsiung Chang , Yu-Hsiung Chang , Kai-Yuan Cheng , Tsau-Hua Hsieh , Chao-Yi Hung , Chao-Chih Lai
- 专利权人： INNOLUX DISPLAY CORP.
- 当前专利权人： INNOLUX DISPLAY CORP.
- 优先权： TW95140732 20061103
- 主分类号： H01L29/167
- IPC分类号： H01L29/167 ; H01L21/84
摘要：
An exemplary thin film transistor (TFT) array substrate (200) includes: a substrate (210), a gate electrode (220) disposed on the substrate, a gate insulating layer (230) disposed on the substrate having the gate electrode, a lightly doped amorphous silicon (a-Si) layer (241) disposed on the gate insulating layer, a first a-Si layer (242) disposed on the lightly doped a-Si layer, a source electrode (251) and a drain electrode (252) disposed on the gate insulating layer and the a-Si layer. The thin film transistor array substrate has a low leakage current.
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