发明申请
- 专利标题: PROCESS FOR FABRICATION OF FINFETs
- 专利标题(中): FINFET制造工艺
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申请号: US11559460申请日: 2006-11-14
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公开(公告)号: US20080111184A1公开(公告)日: 2008-05-15
- 发明人: Jochen Beintner , Gary B. Bronner , Ramachandra Divakaruni , Yujun Li
- 申请人: Jochen Beintner , Gary B. Bronner , Ramachandra Divakaruni , Yujun Li
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A method of fabricating a plurality of FinFETs on a semiconductor substrate in which the gate width of each individual FinFET is defined utilizing only a single etching process, instead of two or more, is provided. The inventive method results in improved gate width control and less variation of the gate width of each individual gate across the entire surface of the substrate. The inventive method achieves the above by utilizing a modified sidewall image transfer (SIT) process in which an insulating spacer that is later replaced by a gate conductor is employed and a high-density bottom up oxide fill is used to isolate the gate from the substrate.
公开/授权文献
- US07470570B2 Process for fabrication of FinFETs 公开/授权日:2008-12-30