发明申请
- 专利标题: Seed/AFM combination for CCP GMR device
- 专利标题(中): CCP GMR设备的种子/ AFM组合
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申请号: US12008151申请日: 2008-01-09
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公开(公告)号: US20080112089A1公开(公告)日: 2008-05-15
- 发明人: Min Li , Cheng Horng , Cherng Han , Yue Liu , Yu-Hsia Chen , Ru-Ying Tong
- 申请人: Min Li , Cheng Horng , Cherng Han , Yue Liu , Yu-Hsia Chen , Ru-Ying Tong
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 主分类号: G11B5/127
- IPC分类号: G11B5/127
摘要:
Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.
公开/授权文献
- US07978440B2 Seed/AFM combination for CCP GMR device 公开/授权日:2011-07-12
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