发明申请
US20080112089A1 Seed/AFM combination for CCP GMR device 有权
CCP GMR设备的种子/ AFM组合

Seed/AFM combination for CCP GMR device
摘要:
Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.
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