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发明申请
US20080113517A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING SELECTIVELY REACTING REACTANT GASES 审中-公开
制备包含选择性反应性气体的半导体器件的方法

METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING SELECTIVELY REACTING REACTANT GASES
摘要：
A method of fabricating semiconductor devices with improved critical dimension (CD) uniformity is provided. The methods include forming photoresist patterns on an etching target layer, forming polymer layers on photoresist patterns on an etching target layer by selectively reacting a reactant gas with the photoresist patterns to provide different thicknesses of the polymer layers according to the position of the photoresist patterns, and etching the etching target layer using the photoresist patterns and the polymer layers as an etch mask.
摘要（中）：

提供了一种制造具有改进的临界尺寸（CD）均匀性的半导体器件的方法。 所述方法包括在蚀刻目标层上形成光致抗蚀剂图案，通过选择性地使反应物气体与光致抗蚀剂图案反应，根据光致抗蚀剂图案的位置提供不同厚度的聚合物层，在蚀刻目标层上的光刻胶图案上形成聚合物层， 并使用光致抗蚀剂图案和聚合物层作为蚀刻掩模蚀刻蚀刻目标层。

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