发明申请
- 专利标题： NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 氮化物半导体器件及其制造方法
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申请号： US11844707申请日： 2007-08-24
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公开(公告)号： US20080116575A1公开(公告)日： 2008-05-22
- 发明人: Katsuomi Shiozawa , Hitoshi Sakuma , Kazushige Kawasaki , Toshihiko Shiga , Toshiyuki Oishi
- 申请人： Katsuomi Shiozawa , Hitoshi Sakuma , Kazushige Kawasaki , Toshihiko Shiga , Toshiyuki Oishi
- 申请人地址： JP Chiyoda-ku
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2006-312533 20061120
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/44
摘要：
A nitride semiconductor device according to the present invention includes a P-type contact layer and a P-type electrode provided on the P-type contact layer. The P-type electrode includes a AuGa film provided on the P-type contact layer, a Au film provided on the AuGa film, a Pt film 4 provided on the Au film, and a Au film provided on the Pt film. The ratio of the thickness of the AuGa film to the total thickness of the AuGa film and the Au film is not less than 12% but not more than 46%.