- 专利标题： Resistive memory including bipolar transistor access devices
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申请号： US11602720申请日： 2006-11-21
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公开(公告)号： US20080117667A1公开(公告)日： 2008-05-22
- 发明人: Thomas Nirschl , Thomas Happ , Klaus Aufinger
- 申请人： Thomas Nirschl , Thomas Happ , Klaus Aufinger
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/34 ; H01S4/00
摘要：
A memory includes a first bipolar transistor, a first bit line, and a first resistive memory element coupled between a collector of the first bipolar transistor and the first bit line. The memory includes a second bit line, a second resistive memory element coupled between an emitter of the first bipolar transistor and the second bit line, and a word line coupled to a base of the first bipolar transistor.
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