发明申请
- 专利标题: IN-SITU METHOD OF CLEANING VAPORIZER DURING DIELECTRIC LAYER DEPOSITION PROCESS
- 专利标题(中): 在介质层沉积过程中清洗蒸发器的现场方法
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申请号: US11781334申请日: 2007-07-23
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公开(公告)号: US20080121184A1公开(公告)日: 2008-05-29
- 发明人: Hoon-sang Choi , Jong-cheol Lee , Ki-vin Im , Eun-ae Chung , Sang-yeol Kang , Young-sun Kim , Kwang-hee Lee
- 申请人: Hoon-sang Choi , Jong-cheol Lee , Ki-vin Im , Eun-ae Chung , Sang-yeol Kang , Young-sun Kim , Kwang-hee Lee
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2006-118557 20061128
- 主分类号: B08B5/00
- IPC分类号: B08B5/00 ; C23C16/00
摘要:
Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.