发明申请
US20080121994A1 DEEP JUNCTION SOI MOSFET WITH ENHANCED EDGE BODY CONTACTS
失效
具有增强边缘接触体的DEEP JUNCTION SOI MOSFET
- 专利标题： DEEP JUNCTION SOI MOSFET WITH ENHANCED EDGE BODY CONTACTS
- 专利标题（中）： 具有增强边缘接触体的DEEP JUNCTION SOI MOSFET
-
申请号： US11564352申请日： 2006-11-29
-
公开(公告)号： US20080121994A1公开(公告)日： 2008-05-29
- 发明人: Thomas W. Dyer , Zhijiong Luo , Jack A. Mandelman
- 申请人： Thomas W. Dyer , Zhijiong Luo , Jack A. Mandelman
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
A semiconductor structure is provided that has body contacts that are located at the edges of the device channel and a buried insulating region under the device channel that is shallower than the buried insulating regions under the source/drain junctions. A method of forming such a semiconductor structure is also described. The inventive method provides for self-alignment of the various features mentioned above with the gate conductor of the structure.
公开/授权文献
- US07550330B2 Deep junction SOI MOSFET with enhanced edge body contacts 公开/授权日：2009-06-23
信息查询
IPC分类:
