- 专利标题： Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof
-
申请号： US11906390申请日： 2007-10-02
-
公开(公告)号： US20080124649A1公开(公告)日： 2008-05-29
- 发明人: Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
- 申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/26
摘要：
Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.