发明申请
摘要：
A direct gold/silicon eutectic die bonding method is disclosed. The method includes the steps of gold plating a die bonding pad, grinding a wafer to a desired thickness, dicing the wafer after the grinding step, picking a die, and attaching the die to the die bonding pad at a temperature above the gold/silicon eutectic temperature. For thinner wafers, a dicing before grinding process is employed.
公开/授权文献
- US07659191B2 Gold/silicon eutectic die bonding method 公开/授权日：2010-02-09
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